Semiconductor Technology Association JEDEC has announced the approval of the UFS 4.0 specification, now an official memory standard that will soon appear in flagship smartphones and increase their performance.
How much will UFS 4.0 improve our devices?
JEDEC, a world leader in developing standards for microelectronics, has approved the Universal Flash Storage 4.0 (JESD220F) and UFSHCI 4.0 (JESD223E) technical specifications. The new UFS 4.0 storage standard is very different from the currently used UFS 3.1.
The most important change from the current standard is a significant increase in the maximum speed of writing and reading data. Sequential read speeds reach up to 4.2 GB/s, a significant increase from 2.9 GB/s in UFS 3.1. Sequential write – up to 2.8 GB / s.
In addition, UFS 4.0 supports up to 23.2Gbps per lane, twice as much as UFS 3.1. The introduction of such high read and write data speeds will significantly reduce the loading time of applications and games, as well as increase the energy efficiency of devices.
Speed isn’t everything
The good news is that a significant increase in speed goes hand in hand with a reduction in the supply voltage of the new memory interface. In UFS 4.0, it is reduced to 2.5 V compared to 3.3 V in UFS 3.1. Due to this, the memory will not heat up so much, which will lead to better smartphone battery life on a single charge.
At the same time, USF 4.0 will be backwards compatible with UFS 3.1 and 3.0, allowing for mixed memory configurations in smartphones. Samsung has already announced that their new standard memory module will have dimensions of 11x13x1 mm and various capacities – up to 1 TB.
Samsung promises that the first USF 4.0 memory modules will go into mass production this fall. In what devices can we expect them? For starters, most likely in the upcoming Galaxy S23 series.To Read Great Articles, Click Here Follow Us On Facebook Twitter Telegram